Dutta, T. , Medina Bailon, C., Xeni, N., Georgiev, V. and Asenov, A. (2022) Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs. In: 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), Vancouver, Canada, 12-15 Dec 2021, ISBN 9781665418928 (doi: 10.1109/NMDC50713.2021.9677480)
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Abstract
In this work, we have developed a solver for the three-dimensional density gradient (DG) equation which is used to apply quantum corrections (QC) to the classical drift-diffusion (DD) simulator in a self-consistent manner. This module has been implemented in C++ using the finite volume method and has been incorporated into NESS (Nano-Electronic Simulation Software) which is being developed in the Device Modelling Group, University of Glasgow. Here, we summarise the implementation details and particularly highlight the impact of the three anisotropic DG masses, which are used as fitting parameters, on the charge profiles and current-voltage (I-V) characteristics in nano-transistors.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Dutta, Dr Tapas and Georgiev, Professor Vihar and Xeni, Nikolas and Asenov, Professor Asen and Medina Bailon, Miss Cristina |
Authors: | Dutta, T., Medina Bailon, C., Xeni, N., Georgiev, V., and Asenov, A. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Device Modelling Group |
ISBN: | 9781665418928 |
Copyright Holders: | Copyright © 2021 Crown |
First Published: | First published in 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC) |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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