Stark, D. et al. (2021) THz Intersubband Emitter based on Silicon. In: 27th International Semiconductor Laser Conference (ISLC 2021), Potsdam, Germany, 10-14 Oct 2021, ISBN 9781665430944 (doi: 10.1109/ISLC51662.2021.9615725)
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Abstract
We present THz quantum cascade emitters realized on a Si substrate. The emission centered at 3.4 and 4.9 THz originates from L-valley transitions in strain-compensated n-type Ge/SiGe heterostructures. This is an important step towards the realization of Si-based THz quantum cascade lasers.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Mirza, Dr Muhammad M A and Paul, Professor Douglas |
Authors: | Stark, D., Mirza, M., Persichetti, L., Montanari, M., Markmann, S., Beck, M., Grange, T., Birner, S., Virgilio, M., Ciano, C., Ortolani, M., Corley, C., Capellini, G., Di Gaspare, L., De Seta, M., Paul, D. J., Faist, J., and Scalari, G. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISSN: | 0899-9406 |
ISBN: | 9781665430944 |
Copyright Holders: | Copyright © 2021 IEEE |
First Published: | First published in 27th International Semiconductor Laser Conference (ISLC 2021) |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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