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Fabrication of single‐crystalline InSb‐on‐insulator by rapid melt growth

Menon, H., Morgan, N. P., Hetherington, C., Athle, R., Steer, M., Thayne, I. , Fontcuberta i Morral, A. and Borg, M. (2022) Fabrication of single‐crystalline InSb‐on‐insulator by rapid melt growth. Physica Status Solidi A: Applications and Materials Science, 219(4), 2100467. (doi: 10.1002/pssa.202100467)

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Abstract

InSb has the smallest bandgap and highest electron mobility among III‐V semiconductors and is widely used for photodetectors and high‐frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single‐crystalline InSb microstructures on insulator‐covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high‐quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single‐crystalline InSb is illustrated and demonstrated here for the first time.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Steer, Dr Matthew and Thayne, Prof Iain
Authors: Menon, H., Morgan, N. P., Hetherington, C., Athle, R., Steer, M., Thayne, I., Fontcuberta i Morral, A., and Borg, M.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physica Status Solidi A: Applications and Materials Science
Publisher:Wiley
ISSN:1862-6300
ISSN (Online):1862-6319
Published Online:09 October 2021
Copyright Holders:Copyright © 2021 The Authors
First Published:First published in Physica Status Solidi A: Applications and Materials Science 219(4): 2100467
Publisher Policy:Reproduced under a Creative Commons licence

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