Houel, J. et al. (2012) Probing single-charge fluctuations at aGaAs/AlAsInterface using laser spectroscopy on a nearby InGaAs quantum dot. Physical Review Letters, 108(10), 107401. (doi: 10.1103/PhysRevLett.108.107401)
Full text not currently available from Enlighten.
Abstract
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single-charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with ± 5 nm resolution. The results identify and quantify the main source of charge noise in the commonly used optical field-effect devices.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Badolato, Professor Antonio |
| Authors: | Houel, J., Kuhlmann, A. V., Greuter, L., Xue, F., Poggio, M., Gerardot, B. D., Dalgarno, P. A., Badolato, A., Petroff, P. M., Ludwig, A., Reuter, D., Wieck, A. D., and Warburton, R. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Physical Review Letters |
| Publisher: | American Physical Society |
| ISSN: | 0031-9007 |
| ISSN (Online): | 1079-7114 |
| Published Online: | 05 March 2012 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric