Sadi, T., Badami, O., Georgiev, V. and Asenov, A. (2019) Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. In: 12th International Conference on Large-Scale Scientific Computing, LSSC 2019, Sozopol, Bulgaria, 10-14 June 2019, pp. 429-437. (doi: 10.1007/978-3-030-41032-2_49)
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Abstract
By using a stochastic simulation model based on the kinetic Monte Carlo approach, we study the physics, operation and reliability of resistive random-access memory (RRAM) devices based on oxides, including silicon-rich silica (SiO x ) and hafnium oxide – HfO x – a widely used transition metal oxide. The interest in RRAM technology has been increasing steadily in the last ten years, as it is widely viewed as the next generation of non-volatile memory devices. The simulation procedure describes self-consistently electronic charge and thermal transport effects in the three-dimensional (3D) space, allowing the study of the dynamics of conductive filaments responsible for switching. We focus on the study of the reliability of these devices, by specifically looking into how oxygen deficiency in the system affects the switching efficiency.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Badami, Mr Oves and Georgiev, Professor Vihar and Sadi, Dr Toufik |
| Authors: | Sadi, T., Badami, O., Georgiev, V., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 0302-9743 |
| Published Online: | 13 February 2020 |
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