Sadi, T., Badami, O., Georgiev, V. , Ding, J. and Asenov, A. (2019) Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides. In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. 2019, ISBN 9781728109404 (doi: 10.1109/SISPAD.2019.8870391)
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Abstract
Nowadays, resistive random-access memories (RRAMs) are widely considered as the next generation of non-volatile memory devices. Here, we employ a physics-based multi-scale kinetic Monte Carlo simulator to study the microscopic transport properties and characteristics of promising RRAM devices based on transition metal oxides, specifically hafnium oxide (HfO x ) based structures. The simulator handles self-consistently electronic charge and thermal transport in the three-dimensional (3D) space, allowing the realistic study of the dynamics of conductive filaments responsible for switching. By presenting insightful results, we argue that using a simulator of a 3D nature, accounting for self-consistent fields and self-heating, is necessary for understanding switching in RRAMs. As an example, we look into the unipolar operation mode, by showing how only the correct inclusion of self-heating allows the proper reconstruction of the switching behaviour. The simulation framework is well-suited for exploring the operation and reliability of RRAMs, providing a reliable computational tool for the optimization of existing device technologies and the path finding and development of new RRAM options.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Badami, Mr Oves and Georgiev, Professor Vihar and Sadi, Dr Toufik |
| Authors: | Sadi, T., Badami, O., Georgiev, V., Ding, J., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 1946-1577 |
| ISBN: | 9781728109404 |
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