Chowdhury, R., Rees, P., Adhikari, S. , Scarpa, F. and Wilks, S.P. (2010) Electronic structures of silicon doped ZnO. Physica B: Condensed Matter, 405(8), pp. 1980-1985. (doi: 10.1016/j.physb.2010.01.084)
Full text not currently available from Enlighten.
Abstract
We have calculated the electronic structure of ZnO systems doped with Silicon (Si) using generalized gradient approximation. We found that a donor level is formed while Zn is substituted by Si. The variation in band gap is calculated as a function of Si concentration in Zn1−xSixO (0 ≤ x ≤ 12.5) system and comparisons are made with recently published experimental results. Further, we observed that, substitution of Si at O site forms deep acceptor levels near the top of the valence band, and thereby a weak p-type transformation of the system can be realized.
| Item Type: | Articles |
|---|---|
| Additional Information: | RC acknowledges the support of Royal Society through the award of Newton International Fellowship. SA gratefully acknowledges the support The Leverhulme Trust for the award of the Philip Leverhulme Prize. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Adhikari, Professor Sondipon |
| Authors: | Chowdhury, R., Rees, P., Adhikari, S., Scarpa, F., and Wilks, S.P. |
| College/School: | College of Science and Engineering > School of Engineering > Infrastructure and Environment |
| Journal Name: | Physica B: Condensed Matter |
| Publisher: | Elsevier |
| ISSN: | 0921-4526 |
| ISSN (Online): | 1873-2135 |
| Published Online: | 29 January 2010 |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details