Martinez-Oliver, C., Moselund, K. E. and Georgiev, V. P. (2021) Evaluation of Material Profiles for III-V Nanowire Photodetectors. In: 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 13-17 Sep 2021, pp. 39-40. ISBN 9781665412766 (doi: 10.1109/NUSOD52207.2021.9541533)
Text
253364.pdf - Accepted Version 1MB |
Abstract
In this paper we report the simulation-based design of experiment (DoE) study for three different types of III-V based pin photodetectors operating at various wavelengths. Our DoE work shows that the optimal configuration for each device is strongly determined by the wavelength at which we are aiming to operate the photodetector and that a trade-off exists between low dark current and high photocurrent. Heterostructure devices provide the optimum performance in particular for longer wavelengths.
Item Type: | Conference Proceedings |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Georgiev, Professor Vihar and Martinez Oliver, Cristina |
Authors: | Martinez-Oliver, C., Moselund, K. E., and Georgiev, V. P. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
ISSN: | 2158-3242 |
ISBN: | 9781665412766 |
Copyright Holders: | Copyright © 2021 IEEE |
First Published: | First published in 2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD): 39-40 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
Related URLs: |
University Staff: Request a correction | Enlighten Editors: Update this record