Evidence of two-electron tunneling interference in Nb/InAs junctions

Badolato, A. , Giazotto, F., Lazzarino, M., Pingue, P., Beltram, F., Lucheroni, C. and Fazio, R. (2000) Evidence of two-electron tunneling interference in Nb/InAs junctions. Physical Review B, 62(14), 9831. (doi: 10.1103/PhysRevB.62.9831)

Full text not currently available from Enlighten.

Abstract

The impact of junction transparency in driving phase-coherent charge transfer across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within the quasiclassical Green’s-function approach and unambiguously show the physical processes giving rise to the observed excess zero-bias conductivity.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Badolato, Professor Antonio
Authors: Badolato, A., Giazotto, F., Lazzarino, M., Pingue, P., Beltram, F., Lucheroni, C., and Fazio, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN:1098-0121
ISSN (Online):1550-235X

University Staff: Request a correction | Enlighten Editors: Update this record