Gill, K.S., Moskovitz, N., Wang, L.-C., Sherwin, M.S., Badolato, A. , Gerardot, B. and Petroff, P. (2005) Controllable charge storage in quantum dots with independent tuning of electric fields. Applied Physics Letters, 87(16), 162101. (doi: 10.1063/1.2099519)
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Abstract
Electrons and holes are loaded into ensembles of InAs∕GaAs quantum dots using a sequence of near-infrared optical pulses and voltage biases. The number and sign of charge carriers is completely determined by one of the voltage biases in the sequence. The injected charge remains stored in the dots for at least 10s for a range of independently varied growth-direction electric fields and is detected by purely electrical means. The storage is robust to temperatures exceeding 80K.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Badolato, Professor Antonio |
| Authors: | Gill, K.S., Moskovitz, N., Wang, L.-C., Sherwin, M.S., Badolato, A., Gerardot, B., and Petroff, P. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 10 October 2005 |
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