Tuning the cross-gap transition energy of a quantum dot by uniaxial stress

Seidl, S., Högele, A., Kroner, M., Karrai, K., Badolato, A. , Petroff, P. M. and Warburton, R. J. (2006) Tuning the cross-gap transition energy of a quantum dot by uniaxial stress. Physica E: Low-dimensional Systems and Nanostructures, 32(1-2), pp. 14-16. (doi: 10.1016/j.physe.2005.12.069)

Abstract

We show that a piezoelectric actuator can be used to apply uniaxial stress to a layer of self-assembled quantum dots. The applied stress leads to a change of the quantum dot's ground state exciton energy by up to a few hundred ueV. This approach allows the possibility of an in situ and continuous tuning of the stress at temperatures down to 4 K and offers an alternative to tuning by temperature and Stark effect. We measure the relative change in the charging energy to the n-doped back contact by capacitance and the change in the exciton energy by photoluminescence. By tuning the uniaxial stress we are able to perform reflection spectroscopy on a single dot.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Badolato, Professor Antonio
• Authors: Seidl, S., Högele, A., Kroner, M., Karrai, K., Badolato, A., Petroff, P. M., and Warburton, R. J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Physica E: Low-dimensional Systems and Nanostructures
• Publisher: Elsevier
• ISSN: 1386-9477
• ISSN (Online): 1873-1759