Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot

Dalgarno, P.A., McFarlane, J., Gerardot, B.D., Warburton, R.J., Karrai, K. and Badolato, A. (2006) Decay dynamics of the positively charged exciton in a single charge tunable self-assembled quantum dot. Applied Physics Letters, 89(4), 043107. (doi: 10.1063/1.2234745)

Abstract

We report on the decay dynamics of positively charged excitons confined to single InAs quantum dots embedded in an n-type field-effect structure. The positively charged exciton’s dynamics are found to be strongly dependent on device dimensions. With a large (small) dot capping layer the decay is dominated by hole tunneling (radiative recombination). The hole tunneling is successfully modeled with a WKB-like zero-dimensional to three-dimensional tunneling approximation. Hole tunneling is not observed in the dynamics of the neutral exciton negatively charged exciton, or biexciton, an effect we attribute to an increase in barrier height through the interdot Coulomb interactions.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Badolato, Professor Antonio
• Authors: Dalgarno, P.A., McFarlane, J., Gerardot, B.D., Warburton, R.J., Karrai, K., and Badolato, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: AIP Publishing
• ISSN: 0003-6951
• ISSN (Online): 1077-3118