Fine structure of negatively and positively charged excitons in semiconductor quantum dots: electron-hole asymmetry

Ediger, M., Bester, G., Gerardot, B.D., Badolato, A. , Petroff, P.M., Karrai, K., Zunger, A. and Warburton, R.J. (2007) Fine structure of negatively and positively charged excitons in semiconductor quantum dots: electron-hole asymmetry. Physical Review Letters, 98(3), 036808. (doi: 10.1103/PhysRevLett.98.036808)

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Abstract

We present new understanding of excitonic fine structure in close-to-symmetric InAs / GaAs and InGaAs / GaAs quantum dots. We demonstrate excellent agreement between spectroscopy and many-body pseudopotential theory in the energy splittings, selection rules and polarizations of the optical emissions from doubly charged excitons. We discover a marked difference between the fine structure of the doubly negatively and doubly positively charged excitons. The features in the doubly charged emission spectra are shown to arise mainly from the lack of inversion symmetry in the underlying crystal lattice.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Badolato, Professor Antonio
Authors: Ediger, M., Bester, G., Gerardot, B.D., Badolato, A., Petroff, P.M., Karrai, K., Zunger, A., and Warburton, R.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physical Review Letters
Publisher:American Physical Society
ISSN:0031-9007
ISSN (Online):1079-7114

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