Manipulating exciton fine structure in quantum dots with a lateral electric field

Gerardot, B.D. et al. (2007) Manipulating exciton fine structure in quantum dots with a lateral electric field. Applied Physics Letters, 90(4), 041101. (doi: 10.1063/1.2431758)

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Abstract

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Badolato, Professor Antonio
Authors: Gerardot, B.D., Seidl, S., Dalgarno, P.A., Warburton, R.J., Granados, D., Garcia, J.M., Kowalik, K., Krebs, O., Karrai, K., Badolato, A., and Petroff, P.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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