Gerardot, B.D. et al. (2007) Manipulating exciton fine structure in quantum dots with a lateral electric field. Applied Physics Letters, 90(4), 041101. (doi: 10.1063/1.2431758)
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Abstract
The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Badolato, Professor Antonio |
| Authors: | Gerardot, B.D., Seidl, S., Dalgarno, P.A., Warburton, R.J., Granados, D., Garcia, J.M., Kowalik, K., Krebs, O., Karrai, K., Badolato, A., and Petroff, P.M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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