Hole recapture limited single photon generation from a single n-type charge-tunable quantum dot

Dalgarno, P.A., McFarlane, J., Brunner, D., Lambert, R.W., Gerardot, B.D., Warburton, R.J., Karrai, K., Badolato, A. and Petroff, P.M. (2008) Hole recapture limited single photon generation from a single n-type charge-tunable quantum dot. Applied Physics Letters, 92(19), 193103. (doi: 10.1063/1.2924315)

Abstract

The complete control of the electron occupation of a single InGaAs dot is shown to produce highly antibunched single photon emission with nonresonant optical excitation. Intensity correlation measurements show g(2)(0) values of 3% (50%) at low (high) excitation power. A distinct double peak structure is shown at time zero, demonstrating that although two photons may be emitted per excitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture process from the wetting layer into the dot after initial recombination. The recapture dynamics is shown to be adjustable through engineering the valence potential.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Badolato, Professor Antonio
• Authors: Dalgarno, P.A., McFarlane, J., Brunner, D., Lambert, R.W., Gerardot, B.D., Warburton, R.J., Karrai, K., Badolato, A., and Petroff, P.M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: AIP Publishing
• ISSN: 0003-6951
• ISSN (Online): 1077-3118
• Published Online: 13 May 2008