Polarization memory in single quantum dots

Poem, E., Khatsevich, S., Marderfeld, I., Badolato, A. , Petroff, P.M. and Gershoni, D. (2009) Polarization memory in single quantum dots. Solid State Communications, 149(35-36), pp. 1493-1497. (doi: 10.1016/j.ssc.2009.04.046)

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We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was observed for various spectral lines, under the same quasi-resonant excitation below the wetting layer bandgap. We developed a model which explains both qualitatively and quantitatively the experimentally measured polarization spectrum for all these optical transitions. We consider quite generally the loss of spin orientation of the photogenerated electron–hole pair during their relaxation towards the many-carrier ground states. Our analysis unambiguously demonstrates that while electrons maintain their initial spin polarization to a large degree, holes completely dephase.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Badolato, Professor Antonio
Authors: Poem, E., Khatsevich, S., Marderfeld, I., Badolato, A., Petroff, P.M., and Gershoni, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid State Communications
ISSN (Online):1879-2766
Published Online:19 May 2009

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