Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework

Medina-Bailon, C., Dutta, T. , Rezaei, A. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2021) Simulation and modeling of novel electronic device architectures with NESS (Nano-Electronic Simulation Software): a modular nano TCAD simulation framework. Micromachines, 12(6), 680. (doi: 10.3390/mi12060680)

[img] Text
243934.pdf - Published Version
Available under License Creative Commons Attribution.

10MB

Abstract

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Dutta, Dr Tapas and Medina Bailon, Miss Cristina and Rezaei, Dr Ali and Nagy, Dr Daniel and Georgiev, Professor Vihar and Adamu-Lema, Dr Fikru
Authors: Medina-Bailon, C., Dutta, T., Rezaei, A., Nagy, D., Adamu-Lema, F., Georgiev, V. P., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Micromachines
Publisher:MDPI
ISSN:2072-666X
ISSN (Online):2072-666X
Published Online:10 June 2021
Copyright Holders:Copyright © 2021 The Authors
First Published:First published in Micromachines 12(6): 680
Publisher Policy:Reproduced under a Creative Commons License

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
172265SUPERAID7Asen AsenovEuropean Commission (EC)Asenov, Professor AsenENG - Electronics & Nanoscale Engineering
302377Quantum Simulator for Entangled Electronics (QSEE)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/S001131/1ENG - Electronics & Nanoscale Engineering
173715Quantum Electronics Device Modelling (QUANTDEVMOD)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/P009972/1ENG - Electronics & Nanoscale Engineering
305900Electrochemically-enabled high-throughput peptidomics for next-generation precision medicineVihar GeorgievEuropean Commission (EC)862539ENG - Electronics & Nanoscale Engineering