Jooypa, H., Dideban, D. and Heidari, H. (2021) Statistical strategies to capture correlation between overshooting effect and propagation delay time in nano-CMOS inverters. IEEE Access, 9, pp. 65340-65345. (doi: 10.1109/ACCESS.2021.3076202)
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Abstract
In this paper, we model statistical correlation between overshooting effect and propagation delay time in nano-CMOS technology considering the influence of intrinsic parameter fluctuations caused by discreteness of charge and granularity of matter. The impact of input slew rate, output capacitive load, and supply voltage on this statistical correlation is comprehensively studied. Moreover, we propose two alternative approaches which are capable of reproducing the statistical correlation as well as mean and standard deviation of both propagation delay time and overshoot voltage. We evaluate the accuracy of these alternative approaches against accurate Monte-Carlo simulations. It is shown that the statistical correlations are almost preserved using these alternative approaches.
Item Type: | Articles |
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Additional Information: | This research was supported by University of Kashan under supervision of Dr. Daryoosh Dideban. Authors are thankful to the support received for this work from Microelectronics Lab (meLab) under grant number EPSRC IAA (EP/R511705/1) at the University of Glasgow, United Kingdom. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
Authors: | Jooypa, H., Dideban, D., and Heidari, H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Access |
Publisher: | IEEE |
ISSN: | 2169-3536 |
ISSN (Online): | 2169-3536 |
Published Online: | 28 April 2021 |
Copyright Holders: | Copyright © 2021 The Authors |
First Published: | First published in IEEE Access 9: 65340-65345 |
Publisher Policy: | Reproduced under a Creative Commons License |
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