Kettle, J., Perks, R.M. and Hoyle, R.T. (2009) Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters, 45(1), pp. 79-81. (doi: 10.1049/el:20092309)
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Abstract
The fabrication of a self-switching diode (SSD) from a single layer of n-type indium tin oxide [In2O3:Sn (ITO)] is reported. The material was grown using reactive thermal evaporation and nanostructured using a focused ion beam. The resultant device demonstrates strong current rectification, as well as a high threshold and breakdown voltage, owing to the higher density of states associated with the material, when compared to other reported SSD-device material. It is shown that this work could potentially lead to a range of new transparent devices based on ITO, without the need to develop high quality p-type material.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Kettle, Professor Jeff |
| Authors: | Kettle, J., Perks, R.M., and Hoyle, R.T. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | IET |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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