Sun, Y., Lu, X., Lin, S., Kettle, J., Yeates, S. G. and Song, A. (2010) Polythiophene-based field-effect transistors with enhanced air stability. Organic Electronics, 11(2), pp. 351-355. (doi: 10.1016/j.orgel.2009.10.019)
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Abstract
Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. Substrates of untreated SiO2, octadecyltrichlorosilane (OTS)-treated SiO2, and SiO2 coated with a thin layer of polymethylmethacrylate (PMMA) were compared in terms of OFET electric performance and air stability. We are able to show virtually no change in transistor on/off ratio over a 3-day period in ambient air in OFETs fabricated on SiO2-PMMA substrates. We also studied devices based on OTS-treated PMMA interface. By analyzing the surface morphology, possible mechanisms of the enhanced air stability are discussed.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Kettle, Professor Jeff |
| Authors: | Sun, Y., Lu, X., Lin, S., Kettle, J., Yeates, S. G., and Song, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Organic Electronics |
| Publisher: | Elsevier |
| ISSN: | 1566-1199 |
| ISSN (Online): | 1878-5530 |
| Published Online: | 30 October 2009 |
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