Kettle, J., Chang, S.-W. and Horie, M. (2015) IR sensor based on low bandgap organic photodiode with up-converting phosphor. IEEE Sensors Journal, 15(6), pp. 3221-3224. (doi: 10.1109/JSEN.2015.2394744)
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Abstract
We report an infrared (IR) sensor which is fabricated by integrating a PCPDTBT:PCBM organic photodiode (OPD) with an up-converting (UC) phosphor. The UC phosphor extends the response range by absorbing incoming light with a wavelength of 986 nm and re-emitting at 804 nm, which is a wavelength that can be absorbed by the active layer, resulting in a generation of a photocurrent. In order to ensure low reverse bias leakage current, PEDOT:PSS was not used as a hole transporting layer, which reduced reverse leakage current by two orders of magnitude compared with conventional hole transporting layers. An IR-emitting laser diode (with emission at 986 nm) is used as a light source to illuminate the sensor. The results demonstrate the proof of principle of sensing using polymer-based OPDs in the near-IR, with wider applications possible in areas, such as telecommunications or sensors if different UC phosphors are applied.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Kettle, Professor Jeff |
| Authors: | Kettle, J., Chang, S.-W., and Horie, M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Sensors Journal |
| Publisher: | IEEE |
| ISSN: | 1530-437X |
| ISSN (Online): | 1558-1748 |
| Published Online: | 28 January 2015 |
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