IR sensor based on low bandgap organic photodiode with up-converting phosphor

Kettle, J., Chang, S.-W. and Horie, M. (2015) IR sensor based on low bandgap organic photodiode with up-converting phosphor. IEEE Sensors Journal, 15(6), pp. 3221-3224. (doi: 10.1109/JSEN.2015.2394744)

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We report an infrared (IR) sensor which is fabricated by integrating a PCPDTBT:PCBM organic photodiode (OPD) with an up-converting (UC) phosphor. The UC phosphor extends the response range by absorbing incoming light with a wavelength of 986 nm and re-emitting at 804 nm, which is a wavelength that can be absorbed by the active layer, resulting in a generation of a photocurrent. In order to ensure low reverse bias leakage current, PEDOT:PSS was not used as a hole transporting layer, which reduced reverse leakage current by two orders of magnitude compared with conventional hole transporting layers. An IR-emitting laser diode (with emission at 986 nm) is used as a light source to illuminate the sensor. The results demonstrate the proof of principle of sensing using polymer-based OPDs in the near-IR, with wider applications possible in areas, such as telecommunications or sensors if different UC phosphors are applied.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Kettle, Professor Jeff
Authors: Kettle, J., Chang, S.-W., and Horie, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Sensors Journal
ISSN (Online):1558-1748
Published Online:28 January 2015

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