Fan, H., Feng, L., Zhang, K., Fang, Z., Cen, Y., Li, Y., Li, D., Feng, Q., Gatti, U. and Heidari, H. (2021) Fast-transient radiation-hardened low-dropout voltage regulator for space applications. IEEE Transactions on Nuclear Science, 68(5), pp. 1094-1102. (doi: 10.1109/TNS.2021.3070697)
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Abstract
This paper presents a fast-transient radiation-hardened low-dropout (LDO) voltage regulator integrated in a standard CSMC 0.6 μm BiCMOS technology for space and other harsh radiation environments applications. The fabricated LDO consumes 150 μA quiescent current at 6 A maximum output current. A low dropout voltage of 300 mV which corresponds to an ultra-low RDS(ON) resistance of 50 mΩ is realized by accurate modeling. A separate fast-transient response circuit under narrow-bandwidth condition is proposed to improve the output voltage transient speed. It operates from an input voltage range of 2.8 V to 5.5 V and provides for output voltage of 2.5 V, with output voltage accuracy of ±2%. The proposed LDO achieves a successful line regulation of 1 mV/V, and a load regulation of 2.16 mV/A. Novel radiation-hardened layout techniques are applied to realise high area-efficient LDO chip, whose total area including pads is 5.35 mm2, only about one-third area of similar radiationhardened products. Total ionising dose (TID) experiments were conducted at China Academy of Engineering Physics, Mianyang of Sichuan province. Furthermore, a special set of single event latch-up (SEL) experiments were performed at the Heavy Ion Research Facility in Lanzhou (HIRFL), Institute of Modern Physics, Chinese Academy of Sciences, the most advanced heavy ion accelerator of China. The measurement results show that the LDO can tolerate up to a total ionising dose (TID) of 150 krad (Si) and SEL immunity at a linear energy transfer (LET) of 99.8 MeV/(mg/cm2) with proposed novel layout design.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
| Authors: | Fan, H., Feng, L., Zhang, K., Fang, Z., Cen, Y., Li, Y., Li, D., Feng, Q., Gatti, U., and Heidari, H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Nuclear Science |
| Publisher: | IEEE |
| ISSN: | 0018-9499 |
| ISSN (Online): | 1558-1578 |
| Published Online: | 02 April 2021 |
| Copyright Holders: | Copyright © 2021 IEEE |
| First Published: | First published in IEEE Transactions on Nuclear Science 68(5): 1094-1102 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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