Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach

Dutta, T. , Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V. and Asenov, A. (2019) Schrödinger Equation Based Quantum Corrections in Drift-Diffusion: A Multiscale Approach. In: 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden, 27-30 Oct 2019, ISBN 9781728126371 (doi: 10.1109/NMDC47361.2019.9084010)

Abstract

In this work, we report the development of a 3D drift-diffusion (DD) simulator for ultrascaled transistors with quantum corrections based on the solution of the Schrödinger equation. In a novel multi-scale simulation approach we use effective masses from tight-binding calculations, carrier mobility from the semi-classical Kubo-Greenwood formalism, and quantum corrections based on self-consistent Poisson-Schrödinger solution. This scheme has been implemented into the University of Glasgow TCAD tool called NESS (Nano Electronic Simulation Software). The approach is validated with respect to non-equilibrium Green's function (NEGF) simulations in the case of nanowire field effect transistors with different cross-sectional shapes.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Dutta, Dr Tapas and Carrillo-Nunez, Dr Hamilton and Badami, Mr Oves and Georgiev, Professor Vihar
• Authors: Dutta, T., Medina-Bailon, C., Carrillo-Nunez, H., Badami, O., Georgiev, V., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modeling Group
• ISSN: 2378-377X
• ISBN: 9781728126371
• Published Online: 13 May 2020
• Copyright Holders: Copyright © 2019 IEEE
• First Published: First published in 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy