1.5 μm epitaxially regrown photonic crystal surface emitting laser diode

Bian, Z. et al. (2020) 1.5 μm epitaxially regrown photonic crystal surface emitting laser diode. IEEE Photonics Technology Letters, 32(24), pp. 1531-1534. (doi: 10.1109/LPT.2020.3039059)

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Abstract

We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:King, Ben and Orchard, Dr Jon and Bian, Zijun and Childs, Dr David and Hogg, Professor Richard and Thoms, Dr Stephen and McKenzie, Mr Adam and Taylor, Dr Richard and Rae, Dr Katherine and Babazadeh, Dr Nasser and Li, Mr Guangrui and Gerrard, Dr Neil and MacLaren, Professor Donald
Authors: Bian, Z., Rae, K. J., McKenzie, A. F., King, B. C., Babazadeh, N., Li, G., Orchard, J. R., Gerrard, N. D., Thoms, S., MacLaren, D. A., Taylor, R. J.E., Childs, D., and Hogg, R. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174
Published Online:18 November 2020
Copyright Holders:Copyright © 2020 The Authors
First Published:First published in IEEE Photonics Technology Letters 32(24):1531-1534
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
172610External engagement manager: CDT Photonic Integration for Advanced Data StorageJohn MarshEngineering and Physical Sciences Research Council (EPSRC)EP/L015323/1ENG - Electronics & Nanoscale Engineering