Bian, Z. et al.
(2020)
1.5 μm epitaxially regrown photonic crystal surface emitting laser diode.
IEEE Photonics Technology Letters, 32(24),
pp. 1531-1534.
(doi: 10.1109/LPT.2020.3039059)
Abstract
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, operating under pulsed electrical drive at room temperature, and lasing at 1523 nm. This opens the route to the development of high efficiency InP based surface emitting lasers.
Item Type: | Articles |
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Status: | Published |
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Refereed: | Yes |
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Glasgow Author(s) Enlighten ID: | King, Ben and Orchard, Dr Jon and Bian, Zijun and Childs, Dr David and Hogg, Professor Richard and Thoms, Dr Stephen and McKenzie, Mr Adam and Taylor, Dr Richard and Rae, Dr Katherine and Babazadeh, Dr Nasser and Li, Mr Guangrui and Gerrard, Dr Neil and MacLaren, Professor Donald |
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Authors: |
Bian, Z., Rae, K. J., McKenzie, A. F., King, B. C., Babazadeh, N., Li, G., Orchard, J. R., Gerrard, N. D., Thoms, S., MacLaren, D. A., Taylor, R. J.E., Childs, D., and Hogg, R. A.
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College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
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Journal Name: | IEEE Photonics Technology Letters |
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Publisher: | IEEE |
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ISSN: | 1041-1135 |
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ISSN (Online): | 1941-0174 |
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Published Online: | 18 November 2020 |
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Copyright Holders: | Copyright © 2020 The Authors |
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First Published: | First published in IEEE Photonics Technology Letters 32(24):1531-1534 |
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Publisher Policy: | Reproduced under a Creative Commons License |
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