Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)

Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T. , Nagy, D. , Adamu-Lema, F., Georgiev, V. P. and Asenov, A. (2020) Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS). In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 23 Sep - 06 Oct 2020, pp. 293-296. ISBN 9781728173542 (doi: 10.23919/SISPAD49475.2020.9241594)

Abstract

The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space k⋅p approach in combination with the existing NEGF module.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Dutta, Dr Tapas and Carrillo-Nunez, Dr Hamilton and Nagy, Dr Daniel and Badami, Mr Oves and Georgiev, Professor Vihar and Asenov, Professor Asen and Medina Bailon, Miss Cristina and Adamu-Lema, Dr Fikru
• Authors: Medina Bailon, C., Badami, O., Carrillo-Nunez, H., Dutta, T., Nagy, D., Adamu-Lema, F., Georgiev, V. P., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1946-1569
• ISBN: 9781728173542
• Copyright Holders: Copyright © 2020 The Japan Society of Applied Physics
• First Published: First published in Proceedings of 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 293-296
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher