Electrical Characterisation of β-Ga2O3 Schottky Diode for Deep UV Sensor Applications

Vieira, D. H., Badiei, N., Evans, J. E., Alves, N., Kettle, J. and Li, L. (2020) Electrical Characterisation of β-Ga2O3 Schottky Diode for Deep UV Sensor Applications. In: IEEE Sensors 2020, 25-28 Oct 2020, ISBN 9781728168012 (doi: 10.1109/SENSORS47125.2020.9278829)

Abstract

β-Ga 2 O 3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a β-Ga 2 O 3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto β-Ga 2 O 3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x10 7 and high forward current of 17.58 mA/cm 2 at −5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung’s and Norde’s methods allowing for accurate calculation of the Schottky barrier height in this device.

• Item Type: Conference Proceedings
• Additional Information: The work was supported by the Solar Photovoltaic Academic Research Consortium II (SPARC II) project, gratefully funded by WEFO. The authors thank the Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) (Grant No. 2019/14366-3) and Programa de Pós-Graduação em Ciência e Tecnologia de Materiais (POSMAT) for technical and financial support.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kettle, Professor Jeff
• Authors: Vieira, D. H., Badiei, N., Evans, J. E., Alves, N., Kettle, J., and Li, L.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 2168-9229
• ISBN: 9781728168012
• Published Online: 09 December 2020
• Copyright Holders: Copyright © 2020 IEEE
• First Published: First published in IEEE Sensors 2020
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

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