Single photon avalanche detector, method for use therefore and for its manufacture

The University Court Of The University of Glasgow. Heriot-Watt University (2020) Single photon avalanche detector, method for use therefore and for its manufacture. .

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Publisher's URL: https://patents.google.com/patent/WO2020053564A1/

Abstract

A single photon avalanche diode (SPAD) device is presented. The SPAD device comprising: a Si-based avalanche layer formed over an n-type semiconductor contact layer; a p-type charge sheet layer formed in or on the avalanche layer, the p-type charge sheet layer having an in-plane width; a Ge-based absorber layer, formed over the charge sheet layer and/or the avalanche layer, and overlapping the charge sheet layer, the Ge-based absorber layer having an in-plane width; wherein, at least in one in-plane direction, the in-plane width of the Ge-based absorber layer is greater than the in-plane width of the p-type charge sheet layer.

Item Type:Patents
Additional Information:Publication Number: WO2020053564A1. International Application Number: PCT/GB2019/052508.
Status:Published
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Millar, Dr Ross and Paul, Professor Douglas and Dumas, Dr Derek and Kirdoda, Mr Jaroslaw
Authors: Paul, D. J., Dumas, D., Kirdoda, J., Millar, R. W., Mirza, M. M., Buller, G. S., Vines, P., and Kuzmenko, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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