EML Based on Lumped Configuration, Identical Epitaxial Layer and HSQ Planarization

Al-Moathin, A., Hou, L. , Di Gaetano, E. and Marsh, J. H. (2020) EML Based on Lumped Configuration, Identical Epitaxial Layer and HSQ Planarization. In: 5th International Conference on the UK-China Emerging Technologies (UCET 2020), Glasgow, UK, 20-21 Aug 2020, ISBN 9781728194882 (doi: 10.1109/UCET51115.2020.9205351)

Abstract

We present a new electro-absorption modulated laser based on a lumped configuration, identical epitaxial layer scheme, and a new low-permittivity planarization method. The design of the device is intended to offer a high modulation frequency using a simple and cheap fabrication process. A thick-film of HSQ spinon coating was used to planarize the device and enable a low capacitance contact to the p-side. A 6−μm−thick planarized HSQ layer was fabricated and used to implement the electrode to the electroabsorption modulator.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John and Al-Moathin, Mr Ali and Hou, Dr Lianping and Di Gaetano, Dr Eugenio
• Authors: Al-Moathin, A., Hou, L., Di Gaetano, E., and Marsh, J. H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781728194882
• Copyright Holders: Copyright © 2020 IEEE
• First Published: First published in 2020 International Conference on UK-China Emerging Technologies (UCET)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

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• Organisation

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
172610		External engagement manager: CDT Photonic Integration for Advanced Data Storage	John Marsh	Engineering and Physical Sciences Research Council (EPSRC)	EP/L015323/1	ENG - Electronics & Nanoscale Engineering