Das, P. et al. (2020) Band line-up investigation of atomic layer deposited TiAlO and GaAlO on GaN. ECS Journal of Solid State Science and Technology, 9(6), 063003. (doi: 10.1149/2162-8777/aba4f4)
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Abstract
A comprehensive study of the band alignments of TixAl1−xOy (with x = 9%, 16%, 25%, 36%, 100%) and GaxAl1−xOy (x = 5%, 20%, 80% and 95%) fabricated using atomic layer deposition on GaN has been presented using X-ray photoelectron spectroscopy and variable angle spectroscopic ellipsometry. The permittivity, k, has been found to be enhanced from ~10 for 9% Ti in TixAl1−xOy to 76 for TiO2, however TiO2 brings an unfavorable band alignment and a small conduction band offset (<0.1 eV) with GaN. The latter has been observed for all studied TixAl1−xOy films deposited on GaN. On the other hand, GaxAl1−xOy films show a substantial increase of the band gap from 4.5 eV for Ga2O3 to 5.5 eV for x = 20% Ga and 6.0 eV for x = 5% Ga. A strong suppression of leakage current in associated GaxAl1−xOy-based metal insulator semiconductor capacitors has also been observed, showing promise for device applications.
Item Type: | Articles |
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Additional Information: | The authors acknowledge UGC-UKIERI project numbers IND/ CONT/G/17-18/18 and F.No.184-1/2018(IC) “Dielectric engineering on GaN for sustainable energy applications” funded by the British Council; UKRI GCRF GIAA award 2018/19 and “Digital in India” project no. EP/P510981/1 funded by the EPSRC, UK. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain |
Authors: | Das, P., Jones, L. A. H., Gibbon, J. T., Dhanak, V. R., Partida-Manzanera, T., Roberts, J. W., Potter, R., Chalker, P. R., Cho, S.-J., Thayne, I. G., Mahapatra, R., and Mitrovic, I. Z. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | ECS Journal of Solid State Science and Technology |
Publisher: | Electrochemical Society |
ISSN: | 2162-8769 |
ISSN (Online): | 2162-8777 |
Published Online: | 10 July 2020 |
Copyright Holders: | Copyright © 2020 The Electrochemical Society ("ECS") |
First Published: | First published in ECS Journal of Solid State Science and Technology 9(6): 063003 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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