Selective phase growth and precise-layer control in MoTe2

Fraser, J. P. et al. (2020) Selective phase growth and precise-layer control in MoTe2. Communications Materials, 1, 48. (doi: 10.1038/s43246-020-00048-4)

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Minor structural changes in transition metal dichalcogenides can have dramatic effects on their electronic properties. This makes the quest for key parameters that enable a selective choice between the competing metallic and semiconducting phases in the 2D MoTe2 system compelling. Herein, we report the optimal conditions at which the choice of the initial seed layer dictates the type of crystal structure of atomically-thin MoTe2 films grown by chemical vapour deposition (CVD). When Mo metal is used as a seed layer, semiconducting 2H-MoTe2 is the only product. Conversely, MoO3 leads to the preferential growth of metallic 1T′-MoTe2. The control over phase growth allows for simultaneous deposition of both 2H-MoTe2 and 1T′-MoTe2 phases on a single substrate during one CVD reaction. Furthermore, Rhodamine 6G dye can be detected using few-layered 1T′-MoTe2 films down to 5 nM concentration, demonstrating surface enhanced Raman spectroscopy (SERS) with sensitivity several orders of magnitude higher than for bulk 1T′-MoTe2.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Ganin, Dr Alexey and Fraser, Mr James and Graham, Professor Duncan and Zhang, Jingyi and McKenzie, Mr Adam and Masaityte, Miss Liudvika and Moran, Professor David and MacLaren, Dr Donald
Authors: Fraser, J. P., Masaityte, L., Zhang, J., Laing, S., Moreno-Lopez, J. C., McKenzie, A. F., McGlynn, J. C., Panchal, V., Graham, D., Kazakova, O., Pichler, T., MacLaren, D., Moran, D. A.J., and Ganin, A. Y.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Communications Materials
Publisher:Nature Research
ISSN (Online):2662-4443
Copyright Holders:Copyright © The Author(s) 2020
First Published:First published in Communications Materials 1:48
Publisher Policy:Reproduced under a Creative Commons license

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
173359Modular assembly of high temperature superconductors from dimensionally reduced iron-based chalcogenide blocksAlexey GaninEngineering and Physical Sciences Research Council (EPSRC)EP/P001653/1Chemistry
172865EPSRC DTP 16/17 and 17/18Tania GalabovaEngineering and Physical Sciences Research Council (EPSRC)EP/N509668/1Research and Innovation Services