Karbalaei, M., Dideban, D. and Heidari, H. (2021) A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics. Ain Shams Engineering Journal, 12(1), pp. 755-760. (doi: 10.1016/j.asej.2020.04.015)
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Abstract
Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with a silicon channel utilizing a sectorial cross section is evaluated in terms of Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, and drain induced barrier lowering (DIBL). In addition, the scaling behavior of electronic figures of merit is comprehensively studied with the aid of physical simulations. The electrical characteristic of proposed structure is compared with a circular GAA-FET, which is previously calibrated with an IBM sample at the 22 nm channel length using 3D-TCAD simulations. Our simulation results show that sectorial cross section GAA-FET is a superior structure for controlling short channel effects (SCEs) and to obtain better performance compared to conventional circular cross section counterpart.
| Item Type: | Articles |
|---|---|
| Additional Information: | This research was supported by University of Kashan under supervision of Dr. Daryoosh Dideban. Authors are also thankful to the support received for this work from Microelectronics Lab (meLab) under grant number EPSRC IAA (EP/R511705/1) at the University of Glasgow, UK. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
| Authors: | Karbalaei, M., Dideban, D., and Heidari, H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Ain Shams Engineering Journal |
| Publisher: | Elsevier |
| ISSN: | 2090-4479 |
| ISSN (Online): | 2090-4495 |
| Published Online: | 11 June 2020 |
| Copyright Holders: | Copyright © 2020 The Authors |
| First Published: | First published in Ain Shams Engineering Journal 12(1): 755-760 |
| Publisher Policy: | Reproduced under a Creative Commons licence |
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