Measurements of permittivity, dielectric loss tangent, and resistivity of float-zone silicon at microwave frequencies

Krupka, J., Breeze, J., Centeno, A. , Alford, N., Claussen, T. and Jensen, L. (2006) Measurements of permittivity, dielectric loss tangent, and resistivity of float-zone silicon at microwave frequencies. IEEE Transactions on Microwave Theory and Techniques, 54(11), pp. 3995-4001. (doi: 10.1109/TMTT.2006.883655)

Abstract

The complex permittivity and resistivity of float-zone high-resistivity silicon were measured at microwave frequencies for temperatures from 10 up to 400 K employing dielectric-resonator and composite dielectric-resonator techniques. At temperatures below 25 K, where all free carriers are frozen out, loss-tangent values of the order of 2times10 -4 were measured, suggesting the existence of hopping conductivity or surface charge carrier conductivity in this temperature range. Use of a composite dielectric-resonator technique enabled the measurement of materials having higher dielectric losses (or lower resistivities) with respect to the dielectric-resonator technique. The real part of permittivity of silicon proved to be frequency independent. Dielectric losses of high-resistivity silicon at microwave frequencies are mainly associated with conductivity and their behavior versus temperature can be satisfactory described by dc conductivity models, except at very low temperatures.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Centeno, Dr Anthony
• Authors: Krupka, J., Breeze, J., Centeno, A., Alford, N., Claussen, T., and Jensen, L.
• College/School: College of Science and Engineering > School of Engineering
• Journal Name: IEEE Transactions on Microwave Theory and Techniques
• Publisher: IEEE
• ISSN: 0018-9480
• ISSN (Online): 1557-9670
• Published Online: 30 October 2006