Temperature stable BaxSr1-xTiO3 thin film structures for microwave devices

Schmidgall, E., Walters, R. A., Centeno, A. , Petrov, P. K. and Alford, N. M. (2010) Temperature stable BaxSr1-xTiO3 thin film structures for microwave devices. Electronics Letters, 46(4), pp. 277-278. (doi: 10.1049/el.2010.3504)

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Bilayer structures of Ba0.25Sr0.75TiO3/Ba0.75Sr0.25TiO3 were deposited in-situ on MgO substrates using pulsed laser deposition. To investigate the electrical properties, interdigital capacitor structures were patterned on the top of the film using photolithography followed by ion-milling processes. The capacitance and the tunability of the structures were measured between 100 and 400 K in the frequency range 1 to 3 GHz. The temperature coefficient of capacitance was evaluated and compared against the same structure patterned on a Ba0.5Sr0.5TiO3 thin film. The dielectric constant of the thin film was evaluated using a conformal transformation. It was seen that the bilayer structure had a much improved temperature coefficient of capacitance but a lower dielectric constant.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Centeno, Dr Anthony
Authors: Schmidgall, E., Walters, R. A., Centeno, A., Petrov, P. K., and Alford, N. M.
College/School:College of Science and Engineering > School of Engineering > Systems Power and Energy
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN (Online):1350-911X
Published Online:11 March 2010
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