Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2020) Quantum enhancement of a S/D tunneling model in a 2D MS-EMC nanodevice simulator: NEGF comparison and impact of effective mass variation. Micromachines, 11(2), 204. (doi: 10.3390/mi11020204)
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Abstract
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel module for the direct Source-to-Drain tunneling (S/D tunneling), and its verification in the simulation of Double-Gate Silicon-On-Insulator (DGSOI) transistors and FinFETs. Compared to ballistic Non-Equilibrium Green’s Function (NEGF) simulations, our results show accurate I D vs. V GS and subthreshold characteristics for both devices. Besides, we investigate the impact of the effective masses extracted Density Functional Theory (DFT) simulations, showing that they are the key of not only the general thermionic emission behavior of simulated devices, but also the electron probability of experiencing tunneling phenomena.
Item Type: | Articles |
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Additional Information: | (This article belongs to the Special Issue Miniaturized Transistors, Volume II). |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Carrillo-Nunez, Dr Hamilton and Lee, Jaehyun and Georgiev, Professor Vihar and Asenov, Professor Asen and Medina Bailon, Miss Cristina |
Creator Roles: | Medina Bailon, C.Writing – original draft, Methodology Carrillo-Nunez, H.Writing – original draft, Methodology Lee, J.Methodology Georgiev, V.Writing – review and editing, Supervision |
Authors: | Medina-Bailon, C., Carrillo-Nunez, H., Lee, J., Sampedro, C., Padilla, J. L., Donetti, L., Georgiev, V., Gamiz, F., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Micromachines |
Publisher: | MDPI |
ISSN: | 2072-666X |
ISSN (Online): | 2072-666X |
Copyright Holders: | Copyright © 2020 The Authors |
First Published: | First published in Micromachines 11(2):204 |
Publisher Policy: | Reproduced under a Creative Commons License |
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