Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate)

Zhou, Y., Han, S.-T., Xu, Z.-X. and Roy, V.A.L. (2012) Low voltage flexible nonvolatile memory with gold nanoparticles embedded in poly(methyl methacrylate). Nanotechnology, 23(34), 344014. (doi: 10.1088/0957-4484/23/34/344014)

Abstract

We demonstrate air-stable low voltage flexible nonvolatile memory transistors by embedding gold nanoparticles (Au NPs) in poly(methyl methacrylate) (PMMA) as the charge storage element. The solution processability of the nanocomposite is suitable for low-cost large area processing on flexible substrates. The memory transistor exhibits a memory window of 2.1 V, long retention time ( > 105 s) with low operating voltage (≤5 V). The memory behavior has been tuned via varying the composition of the fillers (Au NPs), which offers relatively easy processability for different flexible electronics applications. The electrical properties of the memory devices are found to be stable under bending. These findings will be of value for low cost and low voltage advanced flexible electronics.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Vellaisamy, Professor Roy
• Authors: Zhou, Y., Han, S.-T., Xu, Z.-X., and Roy, V.A.L.
• College/School: College of Science and Engineering > School of Engineering
• Journal Name: Nanotechnology
• Publisher: IOP Publishing
• ISSN: 0957-4484
• ISSN (Online): 1361-6528
• Published Online: 10 August 2012