Zhou, Y., Han, S.-T., Sona, P. and Roy, V.A.L. (2013) Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism. Scientific Reports, 3, 2319. (doi: 10.1038/srep02319) (PMID:23900459) (PMCID:PMC3728587)
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Abstract
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
| Authors: | Zhou, Y., Han, S.-T., Sona, P., and Roy, V.A.L. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Scientific Reports |
| Publisher: | Nature Publishing Group |
| ISSN: | 2045-2322 |
| ISSN (Online): | 2045-2322 |
| Copyright Holders: | Copyright © 2013 The Authors |
| First Published: | First published in Scientific Reports 3:2319 |
| Publisher Policy: | Reproduced under a Creative Commons licence |
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