Flexible organic/inorganic heterojunction transistors with low operating voltage

Zhou, Y., Han, S.-T., Zhou, L., Yan, Y., Huang, L.-B., Huang, J. and Roy, V.A.L. (2013) Flexible organic/inorganic heterojunction transistors with low operating voltage. Journal of Materials Chemistry C, 1(42), pp. 7073-7080. (doi: 10.1039/c3tc31456a)

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Abstract

Solution processed organic/inorganic bilayers have been adopted for ambipolar transistors on flexible substrates. By interface engineering, a balanced hole and electron transport is achieved with low voltage operation for poly(3-hexylthiophene) (P3HT)/ZnO bilayers. Atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD), UV-visible absorption spectroscopy and steady-state photoluminescence (PL) spectroscopy are used to analyze the heterostructure film. The ambipolar transistors were relatively stable under various light illuminations and exhibited high mechanical flexibility. The findings provide a better understanding of tunable electrical performance of the organic/inorganic heterojunction and demonstrate their potential application for low voltage electronic devices.

Item Type:Articles
Additional Information:This work was financially supported by City University of Hong Kong project no. 7002853.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhou, Y., Han, S.-T., Zhou, L., Yan, Y., Huang, L.-B., Huang, J., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Materials Chemistry C
Publisher:R S C Publications
ISSN:2050-7526
Published Online:09 September 2013

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