The electrical and optical properties of Cu-doped In2O 3 thin films

Ye, F. et al. (2014) The electrical and optical properties of Cu-doped In2O 3 thin films. Thin Solid Films, 556, pp. 44-47. (doi: 10.1016/j.tsf.2014.01.006)

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To study the effect of Cu doping, In2O3 and Cu-doped In2O3 films were deposited on K9 glass and Si substrates with the same experimental parameters. All the films were found to be body centered cubic and have the same preferred orientation. No secondary phases were detected in Cu-doped In2O3. The atomic ratio of Cu to Cu plus In was approximately 18% in Cu-doped In2O3 films which were found to be n-type. After Cu doping, the resistivity of the films increased by 3 to 4 orders of magnitude and the film with higher Cu content had larger resistivity, due to compensation. Cu doping is found to widen the optical band gap of In2O3 films, possibly due to a metal–insulator transition.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Ye, F., Cai, X.-M., Zhong, X., Tian, X.-Q., Jing, S.-Y., Huang, L.-B., Roy, V.A.L., Zhang, D.-P., Fan, P., Luo, J.-T., Zheng, Z.-H., and Liang, G.-X.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Thin Solid Films
ISSN (Online):1879-2731
Published Online:09 January 2014
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