Flash memory based on solution processed hafnium dioxide charge trapping layer

Zhuang, J., Han, S.-T., Zhou, Y. and Roy, V.A.L. (2014) Flash memory based on solution processed hafnium dioxide charge trapping layer. Journal of Materials Chemistry C, 2(21), pp. 4233-4238. (doi: 10.1039/c4tc00010b)

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Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory. The thickness, crystallinity and morphology of HfO2 fabricated under various conditions were investigated. X-ray diffraction (XRD) patterns indicated the formation of monoclinic HfO2 crystals with increasing annealing temperature. Atomic force microscopy (AFM) images showed relatively smooth films of HfO2 growth. The annealing temperature-dependent effects on the memory window as well as data retention properties have been discussed. A large memory window and long data retention time have been achieved for the pentacene-based flash memory. The results demonstrate that solution processed HfO2 film could be a promising candidate as a charge trapping layer in printable flash memory.

Item Type:Articles
Additional Information:This work was financially supported by Shenzhen Municipality project no. JCYJ20120618115445056 and City University of Hong Kong project no. 7002853.
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Zhuang, J., Han, S.-T., Zhou, Y., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Materials Chemistry C
Publisher:R S C Publications
Published Online:21 March 2014

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