Zhuang, J., Han, S.-T., Zhou, Y. and Roy, V.A.L. (2014) Flash memory based on solution processed hafnium dioxide charge trapping layer. Journal of Materials Chemistry C, 2(21), pp. 4233-4238. (doi: 10.1039/c4tc00010b)
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Abstract
Hafnium dioxide (HfO2) film prepared by the sol–gel technique has been used as a charge trapping layer in organic flash memory. The thickness, crystallinity and morphology of HfO2 fabricated under various conditions were investigated. X-ray diffraction (XRD) patterns indicated the formation of monoclinic HfO2 crystals with increasing annealing temperature. Atomic force microscopy (AFM) images showed relatively smooth films of HfO2 growth. The annealing temperature-dependent effects on the memory window as well as data retention properties have been discussed. A large memory window and long data retention time have been achieved for the pentacene-based flash memory. The results demonstrate that solution processed HfO2 film could be a promising candidate as a charge trapping layer in printable flash memory.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was financially supported by Shenzhen Municipality project no. JCYJ20120618115445056 and City University of Hong Kong project no. 7002853. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
| Authors: | Zhuang, J., Han, S.-T., Zhou, Y., and Roy, V.A.L. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Materials Chemistry C |
| Publisher: | R S C Publications |
| ISSN: | 2050-7526 |
| Published Online: | 21 March 2014 |
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