Han, S.-T., Zhou, Y., Sonar, P., Wei, H., Zhou, L., Yan, Y., Lee, C.-S. and Roy, V.A.L. (2015) Surface engineering of reduced graphene oxide for controllable ambipolar flash memories. ACS Applied Materials and Interfaces, 7(3), pp. 1699-1708. (doi: 10.1021/am5072833) (PMID:25537669)
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Abstract
Tunable charge-trapping behaviors including unipolar charge trapping of one type of charge carrier and ambipolar trapping of both electrons and holes in a complementary manner is highly desirable for low power consumption multibit flash memory design. Here, we adopt a strategy of tuning the Fermi level of reduced graphene oxide (rGO) through self-assembled monolayer (SAM) functionalization and form p-type and n-type doped rGO with a wide range of manipulation on work function. The functionalized rGO can act as charge-trapping layer in ambipolar flash memories, and a dramatic transition of charging behavior from unipolar trapping of electrons to ambipolar trapping and eventually to unipolar trapping of holes was achieved. Adjustable hole/electron injection barriers induce controllable Vth shift in the memory transistor after programming operation. Finally, we transfer the ambipolar memory on flexible substrates and study their charge-trapping properties at various bending cycles. The SAM-functionalized rGO can be a promising candidate for next-generation nonvolatile memories.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
| Authors: | Han, S.-T., Zhou, Y., Sonar, P., Wei, H., Zhou, L., Yan, Y., Lee, C.-S., and Roy, V.A.L. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | ACS Applied Materials and Interfaces |
| Publisher: | American Chemical Society |
| ISSN: | 1944-8244 |
| ISSN (Online): | 1944-8252 |
| Published Online: | 13 January 2015 |
| Related URLs: |
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