The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering

Cai, X.-M. et al. (2015) The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering. Applied Physics Letters, 107, 083901. (doi: 10.1063/1.4928527)

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Indium-doped Cu2O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O2. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu2O, with no other phases detected. Indium atoms exist as In3þin Cu2O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high tem-peratures. The conduction by the samples in the temperature range of the n-type was due to thermalband conduction and the donor energy level was estimated to be 620.2–713.8 meV below the con-duction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu2O and, therefore, lead to n-type conduction

Item Type:Articles
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Cai, X.-M., Su, X.-Q., Ye, F., Wang, H., Tian, X.-Q., Zhang, D.-P., Fan, P., Luo, J.-T., Zheng, Z.-H., Liang, G.-X., and Roy, V.A.L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN (Online):1077-3118
Published Online:26 August 2015
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