Ye, F. et al. (2017) Doping cuprous oxide with fluorine and its band gap narrowing. Journal of Alloys and Compounds, 721, pp. 64-69. (doi: 10.1016/j.jallcom.2017.05.272)
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Abstract
Phase-pure cuprous oxide (Cu2O) thin films doped with Fluorine (F) have been prepared under thermal diffusion at diffusion temperatures of 1123 K and 1223 K and it is found that higher diffusion temperature leads to larger grain size. F-doping slightly reduces the lattice constant and F-doped Cu2O thin films exhibit p-type semiconductor characteristics. The reduction of band gap occurs due to F-doping induced impurity band, because F-doped samples have larger Urbach tails than that of undoped samples. Theoretical calculation demonstrates that substitutional F-doping makes Cu2O almost metallic because the energy bands of F atoms enter the forbidden gap, and interstitial F-doping narrows the band gap because F atoms contribute to the valence bands. The doped F atoms are very possibly interstial and play the role of acceptors in Cu2O. Phase-pure Cu2O doped with F have smaller resistivity and larger hole concentration, implying potential application in solar cells.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
Authors: | Ye, F., Zeng, J.-J., Cai, X.-M., Su, X.-Q., Wang, B., Wang, H., Roy, V.A.L., Tian, X.-Q., Lia, J.-W., Zhang, D.-P., Fan, P., and Zhang, J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Alloys and Compounds |
Publisher: | Elsevier |
ISSN: | 0925-8388 |
ISSN (Online): | 1873-4669 |
Published Online: | 27 May 2017 |
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