Chen, X., Zhou, Y., Roy, V. A.L. and Han, S.-T. (2018) Evolutionary metal oxide clusters for novel applications: toward high‐density data storage in nonvolatile memories. Advanced Materials, 30(3), 1703950. (doi: 10.1002/adma.201703950) (PMID:29058796)
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Abstract
Because of current fabrication limitations, miniaturizing nonvolatile memory devices for managing the explosive increase in big data is challenging. Molecular memories constitute a promising candidate for next‐generation memories because their properties can be readily modulated through chemical synthesis. Moreover, these memories can be fabricated through mild solution processing, which can be easily scaled up. Among the various materials, polyoxometalate (POM) molecules have attracted considerable attention for use as novel data‐storage nodes for nonvolatile memories. Here, an overview of recent advances in the development of POMs for nonvolatile memories is presented. The general background knowledge of the structure and property diversity of POMs is also summarized. Finally, the challenges and perspectives in the application of POMs in memories are discussed.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy |
| Authors: | Chen, X., Zhou, Y., Roy, V. A.L., and Han, S.-T. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Advanced Materials |
| Publisher: | Wiley |
| ISSN: | 0935-9648 |
| ISSN (Online): | 1521-4095 |
| Published Online: | 23 October 2017 |
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