Fabrication of octamethyl substituted zinc(II) phthalocyanine nanostructure via exfoliation and use for solution-processed field-effect transistor

Wang, Y., Shan, H., Sun, X., Dong, L., Feng, Y., Hu, Q., Ye, W., Roy, V.A.L. , Xu, J. and Xu, Z.-X. (2018) Fabrication of octamethyl substituted zinc(II) phthalocyanine nanostructure via exfoliation and use for solution-processed field-effect transistor. Organic Electronics, 55, pp. 15-20. (doi: 10.1016/j.orgel.2018.01.004)

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Abstract

Ultrathin nanocrystals with thicknesses of only several monolayers and even a single monolayer were prepared via exfoliation by ultrasound from an octamethyl substituted zinc(II) phthalocyanine (ZnMe2Pc). The drop-casted thin films of these nanocrystals exhibited higher crystallinity than that of the vacuum-deposited film. The drop-casted field-effect transistor based on these nanocrystals showed a significant increase in charge carrier mobility because of enhanced intermolecular π-π stacking in the ultrasonic-treated ZnMe2Pc, and the measured mobility was two orders of magnitude higher than that of the vacuum-deposited transistor.

Item Type:Articles
Additional Information:This work was supported by Special Funds for the Development of Strategic Emerging Industries in Shenzhen (JCYJ20170412154240645).
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vellaisamy, Professor Roy
Authors: Wang, Y., Shan, H., Sun, X., Dong, L., Feng, Y., Hu, Q., Ye, W., Roy, V.A.L., Xu, J., and Xu, Z.-X.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Organic Electronics
Publisher:Elsevier
ISSN:1566-1199
ISSN (Online):1878-5530
Published Online:04 January 2018

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