Cai, X.-M. et al. (2019) Fabricating ZnSnN2 with cosputtering. Surface and Coatings Technology, 359, pp. 169-174. (doi: 10.1016/j.surfcoat.2018.12.080)
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Abstract
The deposition of ZnSnN2 by co-sputtering was studied systematically. Different deposition parameters, including substrate temperatures, N2 flow rates and different work pressure etc. were tried and the structural, optical and electrical properties were studied. The results show that the deposition parameters to fabricate ZnSnN2 are relatively wide. The suitable substrate temperature to obtain polycrystalline ZnSnN2 is around 350 °C when other parameters are kept constant. Relatively larger N2 flow rate can suppress the formation of metallic phase such as Sn and favour the deposition of ZnSnN2 with relatively pure phase, with other parameters to be constant. The addition of the substrate bias voltage or a relatively lower power of the Sn target is harmful to the film crystallization of ZnSnN2. The samples are considered to be wurtzite due to the absence of the orthorhombic (110) and (011) peaks at 20°–22°. The hexagonal lattice constants a and c are about 3.36–3.40 Å and 5.49 Å, respectively. The sputtering pressure can affect the structural and electrical properties of ZnSnN2. ZnSnN2 prepared at larger work pressure such as 7.0 Pa has a lower electron density (6.72 × 1019 cm−3) and a higher mobility (24.3 cm2 V−1 s−1) as compared with those prepared at 1.0 and 3.0 Pa.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vellaisamy, Professor Roy and Karthikeyan, Dr Vaithinathan |
| Authors: | Cai, X.-M., Wang, B., Ye, F., Zeng, J.-J., Vaithinathan, K., Wang, F., Ma, X.-F., Xie, Y.-Z., Zhang, D.-P., Fan, P., and Roy, V.A.L. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Surface and Coatings Technology |
| Publisher: | Elsevier |
| ISSN: | 0257-8972 |
| ISSN (Online): | 1879-3347 |
| Published Online: | 20 December 2018 |
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