Ge-On-Si High Efficiency Spads at 1310 Nm

Dumas, D. C.S., Kirdoda, J. , Vines, P., Kuzmenko, K., Millar, R. W. , Buller, G. S. and Paul, D. J. (2019) Ge-On-Si High Efficiency Spads at 1310 Nm. In: 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Munich, Germany, 23-27 Jun 2019, ISBN 9781728104690 (doi: 10.1109/CLEOE-EQEC.2019.8873357)

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Ge on Si SPAD devices hold promise for cost effective use in vehicular LIDAR [1], quantum optics, quantum communications, and other applications. Previous Ge on SI SPAD devices using mesa structures have shown high dark count rate (DCR) and low single photon detection efficiency (SPDE) [2]. The novel planar device design demonstrated here shows low DCR and high SPDE at short-wave infrared wavelengths. The novel design allows better performance by confining the high field regions using an implanted charge sheet and small top contact region. This design removes the interaction between etched sidewalls and high electric fields seen in mesa devices. We have fabricated devices with a 100 μm diameter charge sheet and a 90 μ m diameter top contact. TCSPC measurements were taken at 78 K, 100 K, 125 K, using 1310 nm light with <; <; 1 photon per pulse on average and 50 ns gate times (Fig. 1). A record high SPDE of 38% for Ge-on-Si SPADs was measured for a device temperature of 125 K with an excess bias of 5.5 %, and a record low NEP of 2× 10 -16 WHz -1/2 was demonstrated at 78 K.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Millar, Dr Ross and Paul, Professor Douglas and Dumas, Dr Derek and Kirdoda, Mr Jaroslaw
Authors: Dumas, D. C.S., Kirdoda, J., Vines, P., Kuzmenko, K., Millar, R. W., Buller, G. S., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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