Sequential injection of domain walls into ferroelectrics at different bias voltages: paving the way for “domain wall memristors”

Whyte, J.R., McQuaid, R.G.P., Ashcroft, C.M., Einsle, J.F. , Canalias, C., Gruverman, A. and Gregg, J.M. (2014) Sequential injection of domain walls into ferroelectrics at different bias voltages: paving the way for “domain wall memristors”. Journal of Applied Physics, 116(6), 066813. (doi: 10.1063/1.4891347)

Abstract

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO4 (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Einsle, Dr Joshua Franz
• Authors: Whyte, J.R., McQuaid, R.G.P., Ashcroft, C.M., Einsle, J.F., Canalias, C., Gruverman, A., and Gregg, J.M.
• College/School: College of Science and Engineering > School of Geographical and Earth Sciences > Earth Sciences
• Journal Name: Journal of Applied Physics
• Publisher: American Institute of Physics
• ISSN: 0021-8979
• ISSN (Online): 1089-7550
• Copyright Holders: Copyright © 2014 AIP Publishing LLC.
• First Published: First published in Journal of Applied Physics 116(6):066813
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher