Karbalaei, M., Dideban, D. and Heidari, H. (2020) Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: a simulation study. Results in Physics, 16, 102823. (doi: 10.1016/j.rinp.2019.102823)
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Abstract
In this paper, we consider the electrical performance of a circular cross section gate all around-field effect transistor (GAA-FET) in which gate dielectric coverage with high-k dielectric (HfO2) over the channel region has been varied. Our simulations show the fact that as high-k dielectric coverage over the channel increases, ION/IOFF ratio and transconductance over drain current (gm/ID) will be enhanced. Moreover, we investigate the impact of channel length scaling on these devices. The obtained results show that subthreshold slope (SS), drain induced barrier lowering (DIBL) and threshold voltage (VTH) roll-off will be reduced as a result of scaling. In this work TCAD simulator was concisely calibrated against experimental data of a GAA-FET from IBM. The Schrödinger equation is solved in the transverse direction and quantum mechanical confinement effects are taken into account.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
| Authors: | Karbalaei, M., Dideban, D., and Heidari, H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Results in Physics |
| Publisher: | Elsevier |
| ISSN: | 2211-3797 |
| ISSN (Online): | 2211-3797 |
| Published Online: | 22 November 2019 |
| Copyright Holders: | Copyright © 2019 The Authors |
| First Published: | First published in Results in Physics 16:102823 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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