Samipour, A., Dideban, D. and Heidari, H. (2019) First principles study of the ambipolarity in a germanene nanoribbon tunneling field effect transistor. ECS Journal of Solid State Science and Technology, 8(12), M111-M117. (doi: 10.1149/2.0021912jss)
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Abstract
In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors (TFETs) is examined. The simulations are performed using the combination of density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism. It was observed that using high-k dielectric gate material increases the ON-state current while the combination of hetero-dielectric gate material and gate-drain underlap suppresses the ambipolar current and improves the ON-state current. In addition, the effect of various hetero-junctions in the source region on the performance of GeNR-TFET was investigated. Due to the dependency between the width and energy bandgap in GeNR, utilizing a small bandgap in the source improves ON-state current and its ambipolar behavior.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Heidari, Professor Hadi |
| Authors: | Samipour, A., Dideban, D., and Heidari, H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | ECS Journal of Solid State Science and Technology |
| Publisher: | Electrochemical Society |
| ISSN: | 2162-8769 |
| ISSN (Online): | 2162-8777 |
| Copyright Holders: | Copyright © 2019 The Electrochemical Society |
| First Published: | First published in ECS Journal of Solid State Science and Technology 8(12):M111-M117 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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