Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared

Griskeviciute, U., Gallacher, K. , Millar, R. W. , Paul, D. J. and MacGilp, I. (2019) Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared. In: 2019 IEEE 16th International Conference on Group IV Photonics (GFP), Singapore, 28-30 Aug 2019, ISBN 9781728109053 (doi: 10.1109/GROUP4.2019.8853945)

199192.pdf - Accepted Version



Measurements of sidewall roughness by atomic force microscopy has been used to understand the waveguides losses of Ge-on-Si mid-infrared rib waveguides. Simulations indicate the measured roughness is well below values corresponding to the measured losses indicating sidewall roughness scattering is not the dominant loss mechanism.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Macgilp, Mr Iain and Millar, Dr Ross and Hawley, Mrs Ugne and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Griskeviciute, U., Gallacher, K., Millar, R. W., Paul, D. J., and MacGilp, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2019 The Authors
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
171911Engineering Quantum Technology Systems on a Silicon PlatformDouglas PaulEngineering and Physical Sciences Research Council (EPSRC)EP/N003225/1ENG - Electronics & Nanoscale Engineering